Radiation Effects in Two InGaAs Focal Plane Arrays
Identifieur interne : 007212 ( Main/Repository ); précédent : 007211; suivant : 007213Radiation Effects in Two InGaAs Focal Plane Arrays
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Abstract
As part of the early development for NASA's Mars Laser Communication Demonstration (now canceled), we exposed two InGaAs focal plane arrays (FPAs) to 22 krad(Si) dose at a rate of 4.6 rad(Si)/s using a 60Co gamma-ray source. Both the SU320MS from Sensors Unlimited and the ISC9809 from FLIR Systems, Inc. operated throughout the test. The FPA electronics were shielded from radiation; only the photosensitive InGaAs and its readout integrated circuit (ROIC) were exposed. Background levels on both FPAs increased during the test. The SU320MS saturated and failed to respond to infrared light after the test. The ISC9809's background increased but did not saturate. Phenomena exhibited during the test included both isolated single-pixel hits and increased mean over the full FPA. Tests of the ISC9809 after irradiation indicate no change in gain but an increase in mean dark current. In addition, 91% of the ISC9809 pixels also had increased temporal noise. As a result of these tests, the ISC9809 was chosen for flight, but shielding was added to reduce the level seen by the FPA to an estimated 6 krad(Si) for a 10-year lifetime in Mars orbit.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Radiation Effects in Two InGaAs Focal Plane Arrays</title><author><name sortKey="Knight, Frederick" uniqKey="Knight F">Frederick Knight</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>MIT Lincoln Laboratory</s1><s2>Lexington, MA 02420-9185</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Michigan</region></placeName></affiliation></author><author><name sortKey="Waldon, Matthew" uniqKey="Waldon M">Matthew Waldon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>MIT Lincoln Laboratory</s1><s2>Lexington, MA 02420-9185</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Michigan</region></placeName></affiliation></author><author><name sortKey="Greensmith, Brian" uniqKey="Greensmith B">Brian Greensmith</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>MIT Lincoln Laboratory</s1><s2>Lexington, MA 02420-9185</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Michigan</region></placeName></affiliation></author><author><name sortKey="Mattei, Michael" uniqKey="Mattei M">Michael Mattei</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>MIT Lincoln Laboratory</s1><s2>Lexington, MA 02420-9185</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Michigan</region></placeName></affiliation></author><author><name sortKey="Tonia, Lado" uniqKey="Tonia L">Lado Tonia</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>MIT Lincoln Laboratory</s1><s2>Lexington, MA 02420-9185</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Michigan</region></placeName></affiliation></author><author><name sortKey="Gould, Nicholas" uniqKey="Gould N">Nicholas Gould</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>MIT Lincoln Laboratory</s1><s2>Lexington, MA 02420-9185</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Michigan</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0426486</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 08-0426486 INIST</idno><idno type="RBID">Pascal:08-0426486</idno><idno type="wicri:Area/Main/Corpus">006442</idno><idno type="wicri:Area/Main/Repository">007212</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="main">Proceedings of SPIE - The International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Focal plane arrays</term><term>Gallium Arsenides</term><term>Gamma sources</term><term>Indium Arsenides</term><term>Pixel</term><term>Radiation effects</term><term>Radiation sources</term><term>Space application</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet rayonnement</term><term>Matrice plan focal</term><term>Etude expérimentale</term><term>Source gamma</term><term>Composé ternaire</term><term>Gallium Arséniure</term><term>Indium Arséniure</term><term>Pixel</term><term>Application spatiale</term><term>Source rayonnement</term><term>As Ga In</term><term>InGaAs</term><term>0130C</term><term>0787</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">As part of the early development for NASA's Mars Laser Communication Demonstration (now canceled), we exposed two InGaAs focal plane arrays (FPAs) to 22 krad(Si) dose at a rate of 4.6 rad(Si)/s using a <sup>60</sup>Co gamma-ray source. Both the SU320MS from Sensors Unlimited and the ISC9809 from FLIR Systems, Inc. operated throughout the test. The FPA electronics were shielded from radiation; only the photosensitive InGaAs and its readout integrated circuit (ROIC) were exposed. Background levels on both FPAs increased during the test. The SU320MS saturated and failed to respond to infrared light after the test. The ISC9809's background increased but did not saturate. Phenomena exhibited during the test included both isolated single-pixel hits and increased mean over the full FPA. Tests of the ISC9809 after irradiation indicate no change in gain but an increase in mean dark current. In addition, 91% of the ISC9809 pixels also had increased temporal noise. As a result of these tests, the ISC9809 was chosen for flight, but shielding was added to reduce the level seen by the FPA to an estimated 6 krad(Si) for a 10-year lifetime in Mars orbit.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA05><s2>6690</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Radiation Effects in Two InGaAs Focal Plane Arrays</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Focal plane arrays for space telescopes III : 27-28 August 2007, San Diego, California, USA</s1></fA09><fA11 i1="01" i2="1"><s1>KNIGHT (Frederick)</s1></fA11><fA11 i1="02" i2="1"><s1>WALDON (Matthew)</s1></fA11><fA11 i1="03" i2="1"><s1>GREENSMITH (Brian)</s1></fA11><fA11 i1="04" i2="1"><s1>MATTEI (Michael)</s1></fA11><fA11 i1="05" i2="1"><s1>TONIA (Lado)</s1></fA11><fA11 i1="06" i2="1"><s1>GOULD (Nicholas)</s1></fA11><fA12 i1="01" i2="1"><s1>GRYCEWICZ (Thomas John)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>MARSHALL (Cheryl J.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>WARREN (Penny G.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>MIT Lincoln Laboratory</s1><s2>Lexington, MA 02420-9185</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>Society of photo-optical instrumentation engineers</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>66900E.1-66900E.6</s2></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA26 i1="01"><s0>978-0-8194-6838-3</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000172847050120</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>7 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0426486</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE - The International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>As part of the early development for NASA's Mars Laser Communication Demonstration (now canceled), we exposed two InGaAs focal plane arrays (FPAs) to 22 krad(Si) dose at a rate of 4.6 rad(Si)/s using a <sup>60</sup>Co gamma-ray source. Both the SU320MS from Sensors Unlimited and the ISC9809 from FLIR Systems, Inc. operated throughout the test. The FPA electronics were shielded from radiation; only the photosensitive InGaAs and its readout integrated circuit (ROIC) were exposed. Background levels on both FPAs increased during the test. The SU320MS saturated and failed to respond to infrared light after the test. The ISC9809's background increased but did not saturate. Phenomena exhibited during the test included both isolated single-pixel hits and increased mean over the full FPA. Tests of the ISC9809 after irradiation indicate no change in gain but an increase in mean dark current. In addition, 91% of the ISC9809 pixels also had increased temporal noise. 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